DDR6 memory, the upcoming successor to DDR5, is expected to offer significant improvements in terms of speed, bandwidth, and features. With a maximum data rate of up to 12,800 MT/s, DDR6 will double the speeds offered by DDR5. Overclocked modules may even reach speeds of up to 16,800 MT/s. Additionally, DDR6 will have four memory channels, doubling the amount in DDR5, and will also feature significantly more memory bandwidth, potentially reaching speeds of 134.4 GB/s.
In addition to speed and bandwidth improvements, DDR6 will also offer more features and reduced voltage. With an expanded feature set and improved power management, DDR6 aims to enhance energy efficiency and error correction capabilities.
Expected to be launched between 2024 and 2025, DDR6 will initially be used in professional enterprise segments and server CPUs. While Samsung anticipates a 2024 launch, SK Hynix expects the market launch to be closer to the end of 2025.
